Kayayyakin nau'i-nau'i biyu, kamar graphene, suna da kyau ga aikace-aikacen semiconductor na al'ada da aikace-aikace masu tasowa a cikin na'urorin lantarki masu sassauƙa. Koyaya, babban ƙarfin juzu'i na graphene yana haifar da karyewa a ƙaramin ƙarfi, yana mai da shi ƙalubale don cin gajiyar ƙayyadaddun kayan lantarki na ban mamaki a cikin na'urorin lantarki mai shimfiɗawa. Don ba da damar ingantaccen aiki mai dogaro mai ƙarfi na masu jagoranci na graphene, mun ƙirƙiri nanoscrolls na graphene a tsakanin yaduddukan graphene, wanda ake magana da shi azaman gungurawar graphene/graphene multilayer (MGGs). Ƙarƙashin ƙunci, wasu naɗaɗɗen gungurawa sun gadar ɓangarorin guraben graphene don kula da hanyar sadarwa mai ruɗi wanda ke ba da damar aiki mai kyau a babban nau'i. Trilayer MGGs da ke goyan bayan elastomers sun riƙe 65% na ainihin gudanar da aikin su a nau'in 100%, wanda yake daidai da alƙawarin gudana na yanzu, yayin da fina-finai na graphene ba tare da nanoscrolls suna riƙe da kashi 25% na farkon tafiyarsu ba. Mai iya miƙewa duk-carbon transistor ƙirƙira ta amfani da MGGs kamar yadda electrodes nuna watsawa na>90% da kuma riƙe 60% na asali fitarwa na yanzu a 120% iri (daidai da jagorancin cajin sufuri). Waɗannan masu iya shimfiɗawa da bayyane duk transistor na carbon zai iya ba da damar haɓakar optoelectronics.
Na'urar lantarki mai buɗewa fili ce mai girma wacce ke da mahimman aikace-aikace a cikin ingantattun tsarin haɗin gwiwar halittu (1, 2) da kuma yuwuwar haɗewa tare da miƙewa optoelectronics (3, 4) don samar da nagartaccen mutum-mutumi mai laushi da nuni. Graphene yana nuna kyawawan kaddarorin kauri na atomic, babban nuna gaskiya, da babban aiki, amma aiwatar da shi a aikace-aikacen da za a iya miƙewa an hana shi ta hanyar daɗaɗɗa a ƙananan nau'ikan. Cin nasara akan iyakokin injina na graphene na iya ba da damar sabbin ayyuka a cikin na'urori masu buɗewa.
Keɓaɓɓen kaddarorin graphene sun sa ya zama ɗan takara mai ƙarfi don ƙarni na gaba na na'urorin lantarki masu kama da gaskiya (5, 6). Idan aka kwatanta da mafi yawan amfani da madugu na gaskiya, indium tin oxide [ITO; 100 ohms / murabba'in (sq) a 90% bayyananne], monolayer graphene girma ta hanyar sinadarai mai tururi (CVD) yana da irin wannan haɗuwa da juriya na takarda (125 ohms / sq) da kuma nuna gaskiya (97.4%) (5). Bugu da ƙari, fina-finan graphene suna da sassauƙa na ban mamaki idan aka kwatanta da ITO (7). Misali, akan faifan filastik, ana iya riƙe tafiyar sa koda don lanƙwasa radius na lanƙwasa ƙanƙanta kamar 0.8 mm (8). Don ƙara haɓaka aikinta na lantarki azaman jagorar sassauƙa na gaskiya, ayyukan da suka gabata sun haɓaka kayan haɗin gwiwar graphene tare da nanowires na azurfa ɗaya-dimensional (1D) ko carbon nanotubes (CNTs) (9-11). Bugu da ƙari, an yi amfani da graphene azaman na'urori masu auna sigina don gaurayawan mahaɗar sinadarai masu girma dabam (kamar 2D girma Si, 1D nanowires / nanotubes, da 0D jimla dige) (12), transistors masu sassauƙa, ƙwayoyin hasken rana, da diodes masu haske (LEDs) (13) -23).
Kodayake graphene ya nuna sakamako mai ban sha'awa ga na'urorin lantarki masu sassauƙa, aikace-aikacen sa a cikin na'urorin lantarki mai shimfiɗawa an iyakance shi ta hanyar kayan aikin sa (17, 24, 25); graphene yana da taurin jirgin sama na 340 N/m da ma'aunin matashi na 0.5 TPa (26). Ƙaƙƙarfan cibiyar sadarwar carbon-carbon ba ta samar da kowane nau'in watsawar makamashi don nau'in da ake amfani da shi don haka da sauri yana fashe a ƙasa da kashi 5%. Misali, CVD graphene canjawa wuri uwa polydimethylsiloxane (PDMS) roba substrate iya kawai kula da conductivity a kasa da 6% iri (8). Ƙididdigar ƙididdiga sun nuna cewa ƙullawa da wasa tsakanin yadudduka daban-daban ya kamata su rage taurin (26). Ta hanyar tara graphene zuwa yadudduka da yawa, an ba da rahoton cewa wannan graphene bi- ko trilayer yana iya shimfiɗawa zuwa nau'in 30%, yana nuna juriya sau 13 ƙasa da na monolayer graphene (27). Duk da haka, wannan ƙaddamarwa har yanzu yana da ƙasa da ƙasa zuwa na'urorin da za a iya shimfidawa na zamani (28, 29).
Transistor suna da mahimmanci a aikace-aikace masu iya shimfiɗawa saboda suna ba da damar karanta firikwensin firikwensin da kuma nazarin sigina (30, 31). Transistor akan PDMS tare da graphene multilayer azaman tushen / magudanar ruwa da kayan tashoshi na iya kula da aikin lantarki har zuwa nau'in 5% (32), wanda ke ƙasa da ƙaramin ƙimar da ake buƙata (~ 50%) don na'urori masu lura da lafiya masu sawa da fata na lantarki. 33, 34). Kwanan nan, an bincika tsarin kirigami na graphene, kuma transistor da aka gate da ruwan wutan lantarki ana iya shimfiɗa shi zuwa kusan 240% (35). Koyaya, wannan hanyar tana buƙatar dakatarwar graphene, wanda ke dagula tsarin ƙirƙira.
Anan, muna samun na'urorin graphene masu iya shimfiɗawa sosai ta hanyar haɗa rubutun graphene (~ 1 zuwa 20 μm tsayi, ~ 0.1 zuwa 1 μm faɗi, da ~ 10 zuwa 100 nm tsayi) a tsakanin yadudduka na graphene. Muna tsammanin cewa waɗannan littattafan na graphene za su iya samar da hanyoyin da za a bi don binne fashe a cikin zanen zanen graphene, don haka ci gaba da ɗaukar nauyi a ƙarƙashin damuwa. Rubutun graphene baya buƙatar ƙarin ƙira ko tsari; an kafa su ta dabi'a yayin aikin canja wurin rigar. Ta amfani da multilayer G/G (graphene/graphene) gungurawa (MGGs) graphene stretchable electrodes (source/drain and gate) da semiconducting CNTs, mun sami damar nuna sosai m da sosai mikewa duk-carbon transistor, wanda za a iya miƙa zuwa 120 % iri (daidai da hanyar jigilar kaya) kuma suna riƙe 60% na ainihin fitowar su na yanzu. Wannan shi ne mafi shimfiɗar transistor na tushen carbon zuwa yanzu, kuma yana ba da isasshen halin yanzu don fitar da inorganic LED.
Don ba da damar manyan na'urorin lantarki na graphene masu faɗin gaskiya, mun zaɓi graphene mai girma CVD akan bangon Cu. An dakatar da murfin Cu a tsakiyar bututun ma'adini na CVD don ba da damar haɓakar graphene a ɓangarorin biyu, yana samar da tsarin G/Cu/G. Don canja wurin graphene, da farko mun sanya wani bakin ciki mai rufi na poly (methyl methacrylate) (PMMA) don kare gefe ɗaya na graphene, wanda muka sanya wa suna topside graphene (madaidaicin ɗayan gefen graphene), kuma daga baya, An jiƙa duka fim ɗin (PMMA/ saman graphene/Cu/ƙasa graphene) a cikin (NH4) 2S2O8 bayani don kawar da foil ɗin Cu. Graphene na gefen ƙasa ba tare da murfin PMMA ba zai iya samun fashe da lahani waɗanda ke ba da damar wani abu ya shiga ta (36, 37). Kamar yadda aka kwatanta a cikin siffa 1A, ƙarƙashin tasirin tashin hankali na sama, yankunan graphene da aka saki sun yi birgima zuwa cikin gungurawa kuma daga baya an haɗa su a kan sauran saman-G/PMMA fim. Za a iya canja wurin gungurawa na sama-G/G zuwa ga kowane abu, kamar SiO2/Si, gilashi, ko polymer mai laushi. Maimaita wannan tsari na canja wuri sau da yawa akan madauri iri ɗaya yana ba da tsarin MGG.
(A) Misalin tsari na tsarin ƙirƙira don MGGs azaman lantarki mai shimfiɗawa. Yayin canja wurin graphene, graphene na baya akan Cu foil ya karye a iyakoki da lahani, an mirgine shi zuwa sifofin sabani, kuma an haɗa shi sosai a kan manyan fina-finai, yana samar da nanoscrolls. zane mai ban dariya na huɗu yana kwatanta tsarin MGG da aka toshe. (B da C) Halayen TEM masu girma na MGG guda ɗaya, suna mai da hankali kan graphene monolayer (B) da gungura (C), bi da bi. Saitin (B) hoto ne mai ƙarancin girma wanda ke nuna gabaɗayan ilimin halittar jiki na MGGs na monolayer akan grid TEM. Insets na (C) sune bayanan martaba waɗanda aka ɗauka tare da akwatunan rectangular da aka nuna a cikin hoton, inda nisa tsakanin jiragen atom ɗin 0.34 da 0.41 nm. (D) Carbon K-gefen EEL bakan tare da sifa mai zayyana π* da σ* da aka yiwa lakabin. (E) Hoton sashe na AFM na gungurawa G/G monolayer tare da bayanin martaba mai tsayi tare da layin dige-dige na rawaya. (F zuwa I) Na'urar gani da ido da hoton AFM na trilayer G ba tare da (F da H) kuma tare da gungurawa (G da I) akan 300-nm-kauri mai kauri SiO2/Si, bi da bi. An yi wa lakabin gungu-gungu na wakilta da wrinkles don haskaka bambance-bambancen su.
Don tabbatar da cewa littattafan nadi ne na graphene a yanayi, mun gudanar da babban ƙayyadaddun ƙirar lantarki (TEM) da kuma asarar makamashin lantarki (EEL) nazarin sifofi akan tsarin gungurawa na sama-G/G monolayer. Hoto na 1B yana nuna tsarin hexagonal na graphene monolayer, kuma abin da aka shigar shine gabaɗayan yanayin halittar fim ɗin da aka rufe akan ramin carbon guda ɗaya na grid TEM. A monolayer graphene span mafi yawan grid, da kuma wasu graphene flakes a gaban mahara tari na hexagonal zobba bayyana (Fig. 1B). Ta hanyar zuƙowa cikin gungura ɗaya (Fig. 1C), mun lura da babban adadin ɓangarorin graphene lattice, tare da tazarar lattice a cikin kewayon 0.34 zuwa 0.41 nm. Waɗannan ma'aunai suna ba da shawarar cewa flakes ɗin an naɗe su ba da gangan ba kuma ba cikakkiyar graphite ba ne, wanda ke da tazarar lattice na 0.34 nm a cikin tari na "ABAB". Hoto 1D yana nuna nau'in nau'in carbon K-gefen EEL, inda kololuwar 285 eV ta samo asali daga π* orbital da ɗayan a kusa da 290 eV saboda canjin yanayin σ *. Ana iya ganin cewa haɗin gwiwar sp2 ya mamaye wannan tsarin, yana tabbatar da cewa littattafan suna da hoto sosai.
Hotunan Hotunan Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙarfafawa (AFM) ya yi ya ba da haske game da rarraba nanoscrolls na graphene a cikin MGGs (Fig. 1, E zuwa G, da figs. S1 da S2). Ana rarraba litattafan akan saman ba da gangan ba, kuma yawansu a cikin jirgin yana ƙaruwa daidai gwargwado ga adadin jeri-jeri. Yawancin naɗaɗɗen littattafai suna murƙushe su cikin kulli kuma suna nuna tsayin da ba a taɓa gani ba a cikin kewayon 10 zuwa 100 nm. Suna da tsayin 1 zuwa 20 μm kuma faɗin 0.1 zuwa 1 μm, ya danganta da girman filayen graphene na farko. Kamar yadda aka nuna a cikin siffa 1 (H da I), littattafan sun fi girma girma fiye da wrinkles, wanda ke haifar da mafi munin mu'amala tsakanin matakan graphene.
Don auna kaddarorin lantarki, mun zana fina-finai na graphene tare da ko ba tare da tsarin gungurawa ba tare da ɗorawa Layer cikin faɗin 300-μm da tsayin 2000-μm ta amfani da hotolithography. An auna juriya-biyu a matsayin aikin iri a ƙarƙashin yanayin yanayi. Kasancewar gungurawa ya rage juriya ga monolayer graphene da 80% tare da raguwar 2.2% kawai a cikin watsawa (fig. S4). Wannan yana tabbatar da cewa nanoscrolls, waɗanda ke da babban nauyin halin yanzu har zuwa 5 × 107 A / cm2 (38, 39), suna ba da gudummawar wutar lantarki mai mahimmanci ga MGGs. Daga cikin duk mono-, bi-, da trilayer plain graphene da MGGs, trilayer MGG yana da mafi kyawun gudanarwa tare da bayyana kusan 90%. Don kwatanta da sauran tushen graphene da aka ruwaito a cikin wallafe-wallafen, mun kuma auna juriya na takarda guda hudu (fig. S5) kuma mun jera su a matsayin aikin watsawa a 550 nm (fig. S6) a cikin siffa 2A. MGG yana nuna kamanceceniya ko mafi girma da kuma nuna gaskiya fiye da graphene da aka tattara ta hanyar wucin gadi da rage graphene oxide (RGO) (6, 8, 18). Lura cewa juriya na takarda na graphene da aka haɗe ta hanyar wucin gadi daga wallafe-wallafen sun ɗan fi na MGG ɗin mu, mai yiwuwa saboda yanayin girma da ba a inganta su ba da hanyar canja wuri.
(A) Juriyar takardar bincike guda huɗu tare da watsawa a 550 nm don nau'ikan graphene da yawa, inda baƙar fata murabba'i ke nuna mono-, bi-, da trilayer MGGs; jajayen da'irori da shuɗin alwatika sun dace da graphene mai yawa bayyananne wanda aka girma akan Cu da Ni daga nazarin Li et al. (6) da Kim et al. (8), bi da bi, kuma daga baya an canza shi zuwa SiO2/Si ko quartz; kuma triangles kore sune dabi'u don RGO a raguwa daban-daban daga nazarin Bonaccorso et al. ( 18). (B da C) Canjin juriya na al'ada na mono-, bi- da trilayer MGGs da G a matsayin aiki na perpendicular (B) da a layi daya (C) matsawa zuwa alkiblar gudana na yanzu. (D) Canjin juriya na al'ada na bilayer G (ja) da MGG (baƙar fata) ƙarƙashin nau'in cyclic loading har zuwa 50% perpendicular iri. (E) Canjin juriya na al'ada na trilayer G (ja) da MGG (baƙar fata) ƙarƙashin nau'in cyclic loading har zuwa 90% daidaici iri. (F) Canjin ƙarfin ƙarfi na mono-, bi- da trilayer G da bi- da trilayer MGGs azaman aikin n na iri. Inset shine tsarin capacitor, inda polymer substrate shine SEBS kuma Layer dielectric polymer shine SEBS mai kauri 2-μm.
Don kimanta aikin da ya dogara da nau'in MGG, mun canja wurin graphene zuwa ma'aunin thermoplastic elastomer styrene-etylene-butadiene-styrene (SEBS) substrates (~ 2 cm fadi da ~ 5 cm tsayi), kuma an auna ƙarfin aiki yayin da aka shimfiɗa substrate. (duba Materials da Hanyoyi) duka a kai tsaye da kuma layi daya zuwa jagorancin gudana na yanzu (Fig. 2, B da C). Halin da ya dogara da nau'in wutar lantarki ya inganta tare da haɗa nanoscrolls da karuwar lambobi na yadudduka na graphene. Misali, lokacin da nau'in ya kasance daidai da magudanar ruwa na yanzu, don monolayer graphene, ƙari na gungurawa yana ƙara nau'in fashewar lantarki daga 5 zuwa 70%. Haƙurin jurewar graphene ɗin trilayer shima an inganta sosai idan aka kwatanta da graphene monolayer. Tare da nanoscrolls, a 100% perpendicular iri, juriya na trilayer MGG tsarin kawai ya karu da 50%, idan aka kwatanta da 300% na trilayer graphene ba tare da gungurawa ba. An bincika canjin juriya a ƙarƙashin ɗaukar nauyin hawan keke. Don kwatanta (Fig. 2D), juriya na fim din graphene na fili ya karu game da 7.5 sau bayan ~ 700 hawan keke a 50% perpendicular iri kuma ya ci gaba da karuwa tare da damuwa a kowane zagaye. A gefe guda, juriya na bilayer MGG kawai ya karu kusan sau 2.5 bayan ~ 700 hawan keke. Yin amfani da nau'i har zuwa 90% tare da madaidaiciyar shugabanci, juriya na trilayer graphene ya karu ~ sau 100 bayan hawan hawan 1000, yayin da kawai ~ 8 sau a cikin MGG trilayer (Fig. 2E). Ana nuna sakamakon hawan keke a fig. S7. Ingantacciyar haɓakar juriya cikin sauri tare da madaidaiciyar madaidaiciyar hanya shine saboda yanayin faɗuwar ya kasance daidai da alkiblar kwararar yanzu. Bambancin juriya a lokacin lodawa da nau'in zazzagewa shine saboda farfadowar viscoelastic na elastomer na SEBS. Ingantacciyar juriya ta gungun MGG yayin hawan keke ya samo asali ne saboda kasancewar manyan littattafan rubutu waɗanda za su iya gadar fashe fashe na graphene (kamar yadda AFM ke lura da shi), yana taimakawa wajen kula da hanyar da ba ta dace ba. An ba da rahoton wannan abin al'ajabi na ci gaba da ɗawainiya ta hanyar ɓarna a baya don fashewar ƙarfe ko fina-finai na semiconductor akan elastomer substrates (40, 41).
Don kimanta waɗannan fina-finai na tushen graphene a matsayin na'urorin lantarki na ƙofa a cikin na'urori masu shimfiɗawa, mun rufe Layer na graphene tare da Layer dielectric SEBS (kauri 2 μm) kuma mun kula da canjin ƙarfin dielectric azaman aikin iri (duba siffa 2F da Ƙarin Materials don bayani). Mun lura cewa iyawa tare da filayen monolayer da na'urorin lantarki na graphene sun ragu da sauri saboda asarar halayen graphene a cikin jirgin. Sabanin haka, ƙarfin ƙarfin da MGGs ke da shi da kuma graphene a fili ya nuna haɓaka ƙarfin ƙarfi tare da iri, wanda ake sa ran saboda raguwar kaurin dielectric tare da iri. Haɓaka haɓakar da ake tsammani a cikin ƙarfin ya dace sosai tare da tsarin MGG (fig. S8). Wannan yana nuna cewa MGG ya dace a matsayin na'urar lantarki don miƙewa transistor.
Don ci gaba da bincika aikin gungurawa na graphene na 1D akan jure jurewar wutar lantarki da kuma sarrafa rarrabuwar kawuna tsakanin yadudduka na graphene, mun yi amfani da CNTs masu feshi don maye gurbin rubutun na graphene (duba Kayayyakin Ƙari). Don yin kwaikwayi tsarin MGG, mun ajiye adadin CNTs guda uku (wato, CNT1).
(A zuwa C) Hotunan AFM na nau'ikan yawa daban-daban na CNTs (CNT1
Don ƙara fahimtar iyawar su azaman na'urorin lantarki don na'urorin lantarki masu shimfiɗawa, mun bincika tsarin tsarin halittar MGG da G-CNT-G a ƙarƙashin damuwa. Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙadda tọn na Ƙaƙwal na Ƙaƙa ) ya yi a lokacin da aka yi amfani da shi a kan kayan aikin lantarki (figs. S9 da S10). Don lura da yanayin graphene a ƙarƙashin damuwa, mun tattara ma'auni na AFM akan trilayer MGGs da graphene bayyananne bayan an canza shi zuwa bakin ciki sosai (~ 0.1 mm lokacin farin ciki) da na roba SEBS substrates. Saboda lahani na ciki a cikin CVD graphene da lalacewa na waje a lokacin tsarin canja wuri, babu makawa ana haifar da tsagewa akan graphene mai rauni, kuma tare da haɓakar haɓaka, ɓarna ya zama mai girma (Fig. 4, A zuwa D). Dangane da tsarin stacking na carbon-based electrodes, ƙwanƙwasa suna nuna nau'i daban-daban (fig. S11) (27). Girman yanki (wanda aka bayyana azaman yanki mai tsage/analyed area) na graphene multilayer bai kai na monolayer graphene bayan iri ba, wanda yayi dai-dai da haɓakar wutar lantarki ga MGGs. A gefe guda kuma, ana yawan ganin naɗaɗɗen littattafai don haɗa fashe, suna ba da ƙarin hanyoyin tafiyar da fim ɗin. Misali, kamar yadda aka lakafta a hoton Hoton 4B, wani faffadan gungurawa ya haye kan tsagewar da ke cikin trilayer MGG, amma ba a ga gungurawa a cikin faifan graphene ba (Hoto 4, E zuwa H). Hakazalika , CNTs kuma bridged da fasa a cikin graphene (fig. S11). An taƙaita girman yanki mai tsagewa, girman yanki na gungurawa, da rashin ƙarfi na fina-finai a cikin siffa. 4K.
(A zuwa H) A cikin Hotunan AFM na gungurawa G/G trilayer (A zuwa D) da tsarin trilayer G (E zuwa H) akan SEBS na bakin ciki (~ 0.1 mm lokacin kauri) elastomer a 0, 20, 60, da 100 % iri. Ana nuna fashe-fashe da gungurawa tare da kibiyoyi. Duk hotunan AFM suna cikin yanki na 15 μm × 15 μm, ta amfani da ma'aunin sikelin launi ɗaya kamar yadda aka lakafta. (I) Simulators na simintin gyare-gyaren na'urorin lantarki na graphene monolayer akan ma'aunin SEBS. (J) Taswirar kwane-kwane na madaidaicin babban nau'in logarithmic a cikin graphene monolayer da ma'aunin SEBS a nau'in waje na 20%. (K) Kwatankwacin girman yanki mai tsatsa (jajayen ginshiƙi), girman yanki na gungura (shafi mai rawaya), da ƙaƙƙarfan yanayi (shafi shuɗi) don tsarin graphene daban-daban.
Lokacin da aka shimfiɗa fina-finai na MGG, akwai wani muhimmin ƙarin hanyar da littattafan za su iya gadar yankuna masu fashe na graphene, suna kiyaye hanyar sadarwa mai ruɗi. Littattafan graphene suna da ban sha'awa saboda suna iya zama dubun mitoci a tsayi kuma don haka suna iya haɗa fashe waɗanda yawanci har zuwa sikelin micrometer. Bugu da ƙari, saboda littattafan sun ƙunshi nau'ikan graphene masu yawa, ana sa ran za su sami ƙarancin juriya. A kwatancen, ana buƙatar hanyoyin sadarwa na CNT masu yawa (ƙananan watsawa) don samar da kwatankwacin ƙarfin haɗakarwa, kamar yadda CNTs sun fi ƙanƙanta (yawanci ƴan mitoci kaɗan a tsayi) kuma ƙasa da gudanarwa fiye da gungurawa. A gefe guda, kamar yadda aka nuna a cikin fig. S12, yayin da graphene ya fashe yayin miƙewa don ɗaukar nauyi, littattafan ba sa fashe, yana nuna cewa ƙarshen na iya zamewa akan graphene mai tushe. Dalilin da cewa ba za su fashe ba yana yiwuwa saboda tsarin da aka yi birgima, wanda ya ƙunshi yawancin yadudduka na graphene (~ 1 zuwa 2 0 μm tsayi, ~ 0.1 zuwa 1 μm fadi, da ~ 10 zuwa 100 nm high), wanda ke da girma. modul mai tasiri mafi girma fiye da graphene mai Layer Layer. Kamar yadda aka ruwaito ta hanyar Green da Hersam (42), cibiyoyin sadarwa na CNT na ƙarfe (diamita na bututu na 1.0 nm) na iya cimma ƙarancin juriya na takarda <100 ohms/sq duk da juriya mai girma tsakanin CNTs. Idan aka yi la'akari da cewa littattafan mu na graphene suna da faɗin 0.1 zuwa 1 μm kuma cewa littattafan G/G suna da wuraren tuntuɓar juna da yawa fiye da CNTs, juriyar lamba da wurin tuntuɓar graphene da naɗaɗɗen graphene bai kamata su kasance masu iyakance abubuwan da za su ci gaba da haɓaka aiki ba.
A graphene yana da mafi girma modules fiye da SEBS substrate. Ko da yake ingantaccen kauri na graphene electrode yana da ƙasa da na ƙasa, ƙanƙarar lokutan graphene kaurinsa yana kama da na ƙasa (43, 44), yana haifar da tasirin tsibiri mai matsakaici. Mun kwaikwayi nakasar graphene mai kauri 1-nm akan madaidaicin SEBS (duba Ƙarin Kayayyakin don cikakkun bayanai). Bisa ga sakamakon kwaikwayo, lokacin da aka yi amfani da nau'i na 20% zuwa ga SEBS substrate a waje, matsakaicin matsakaici a cikin graphene shine ~ 6.6% (Fig. 4J da fig. S13D), wanda ya dace da gwaje-gwaje na gwaji (duba siffa S13) . Mun kwatanta nau'in da ke cikin graphene mai ƙira da ƙananan yanki ta amfani da microscopy na gani kuma mun gano nau'in a cikin yanki na yanki ya zama aƙalla sau biyu iri a yankin graphene. Wannan yana nuna cewa nau'in da ake amfani da shi akan tsarin lantarki na graphene zai iya kasancewa mai iyakancewa sosai, yana samar da tsibiran graphene masu tsauri a saman SEBS (26, 43, 44).
Sabili da haka, ikon MGG na lantarki don kula da ƙarfin aiki mai girma a ƙarƙashin babban nau'i yana iya yiwuwa ta hanyar manyan hanyoyi guda biyu: (i) Littattafan na iya gadar yankunan da ba a haɗa su ba don kula da hanyar daɗaɗɗa, kuma (ii) multilayer graphene zanen gado / elastomer na iya zamewa. a kan juna, yana haifar da raguwa a kan wayoyin graphene. Don yadudduka da yawa na graphene da aka canjawa wuri akan elastomer, ba a haɗa shi da juna sosai ba, wanda zai iya zamewa don amsawa ga iri (27). Littattafan kuma sun ƙara ƙaƙƙarfan yadudduka na graphene, wanda zai iya taimakawa wajen ƙara rarrabuwa tsakanin yadudduka na graphene don haka yana ba da damar zamewar sassan graphene.
Ana bibi dukkan na'urorin carbon da farin ciki saboda ƙarancin farashi da babban kayan aiki. A cikin yanayinmu, an ƙirƙira dukkan transistor na carbon ta hanyar amfani da ƙofar graphene na ƙasa, babban tushen graphene / lamba mai lambatu, mai sarrafa CNT semiconductor, da SEBS a matsayin dielectric (Fig. 5A). Kamar yadda aka nuna a cikin siffa 5B, na'urar duk-carbon tare da CNTs a matsayin tushen / magudanar ruwa da kofa (na'urar ƙasa) ta fi na'urar da ke da graphene electrodes (na'urar saman). Wannan saboda cibiyoyin sadarwa na CNT suna buƙatar kauri mafi girma kuma, saboda haka, ƙananan watsawar gani don cimma juriya na takarda kama da na graphene (fig. S4). Hoto na 5 (C da D) yana nuna wakilcin canja wuri da masu lanƙwasa fitarwa kafin damuwa don transistor da aka yi da bilayer MGG electrodes. Faɗin tashar da tsayin transistor mara nauyi sun kasance 800 da 100 μm, bi da bi. Ma'aunin kunnawa/kashewa ya fi 103 tare da kunnawa da kashe igiyoyin ruwa a matakan 10−5 da 10-8 A, bi da bi. Wurin fitarwa yana nuna daidaitattun tsarin tsarin layi da sa turation tare da bayyananniyar dogaro-ƙofa, yana nuna kyakkyawar hulɗa tsakanin CNTs da na'urorin lantarki na graphene (45). An lura da juriya na lamba tare da na'urorin lantarki na graphene ya zama ƙasa da wanda aka fitar da fim ɗin Au (duba fig. S14). Matsakaicin motsi na transistor mai shimfiɗawa yana da kusan 5.6 cm2/Vs, kama da na nau'in transistor CNT iri ɗaya na polymer akan madaidaitan Si substrates tare da 300-nm SiO2 azaman dielectric Layer. Ƙarin haɓakawa a cikin motsi yana yiwuwa tare da ingantaccen bututu mai yawa da sauran nau'ikan bututu (46).
(A) Tsarin transistor na tushen graphene. SWNTs, carbon nanotubes mai bango ɗaya. (B) Hoton masu iya miƙewa da aka yi da lantarki na graphene (saman) da na'urorin lantarki na CNT (ƙasa). Bambanci a cikin nuna gaskiya yana bayyane a fili. (C da D) Canja wuri da fitarwa na transistor na tushen graphene akan SEBS kafin iri. (E da F) Canja wurin masu lanƙwasa, kunnawa da kashe na yanzu, rabon kunnawa/kashe, da motsi na transistor na tushen graphene a nau'ikan iri daban-daban.
Lokacin da na'urar da ke bayyana, duk na'urar carbon ta miƙe ta zuwa daidai da hanyar jigilar caji, an sami raguwa kaɗan har zuwa 120% iri. Yayin mikewa, motsi ya ci gaba da raguwa daga 5.6 cm2/Vs a 0% iri zuwa 2.5 cm2/Vs a 120% iri (Fig. 5F). Mun kuma kwatanta aikin transistor don tsawon tashoshi daban-daban (duba tebur S1). Musamman ma, a wani nau'i mai girma kamar 105%, duk waɗannan transistors har yanzu suna nuna ƙimar kunnawa / kashewa (> 103) da motsi (> 3 cm2 / Vs). Bugu da ƙari, mun taƙaita duk aikin kwanan nan akan duk transistor na carbon (duba tebur S2) (47-52). Ta haɓaka ƙirƙira na'ura akan elastomers da yin amfani da MGGs azaman lambobin sadarwa, duk transistors ɗinmu na carbon suna nuna kyakkyawan aiki dangane da motsi da ɗabi'a gami da kasancewa mai iya shimfiɗawa sosai.
A matsayin aikace-aikacen transistor mai cikakken haske kuma mai shimfiɗawa, mun yi amfani da shi don sarrafa canjin LED (Fig. 6A). Kamar yadda aka nuna a cikin siffa 6B, ana iya ganin koren LED a fili ta hanyar na'urar duk-carbon da aka shimfiɗa a sama kai tsaye. Yayin da yake shimfiɗa zuwa ~ 100% (Fig. 6, C da D), ƙarfin hasken LED ba ya canzawa, wanda ya dace da aikin transistor da aka kwatanta a sama (duba fim din S1). Wannan shine rahoton farko na raka'o'in sarrafawa masu iya shimfiɗawa da aka yi ta amfani da na'urorin lantarki na graphene, suna nuna sabon yuwuwar graphene mai shimfiɗa lantarki.
(A) Kewaye na transistor don fitar da LED. GND, kasa. (B) Hoton mai shimfidawa da bayyane duk-carbon transistor a nau'in 0% wanda aka ɗora sama da koren LED. (C) transistor mai fa'ida duka-carbon da mai shimfiɗawa da ake amfani da shi don canza LED ana hawa sama da LED a 0% (hagu) da ~ 100% iri (dama). Fararen kibau suna nuni a matsayin alamar rawaya akan na'urar don nuna canjin nisa da ake miƙawa. (D) Duban gefe na transistor mai shimfiɗa, tare da tura LED a cikin elastomer.
A ƙarshe, mun ɓullo da wani m conductive graphene tsarin cewa kula da high conductivity karkashin manyan iri a matsayin stretchable lantarki, kunna graphene nanoscrolls a tsakanin stacked graphene yadudduka. Waɗannan sifofi guda biyu da trilayer MGG a kan elastomer na iya kula da 21 da 65%, bi da bi, na 0% iri conductivities ɗin su a wani nau'in da ya kai 100%, idan aka kwatanta da cikakkiyar asarar aiki a 5% iri don na'urorin lantarki na monolayer graphene na yau da kullun. . Ƙarin hanyoyin gudanarwa na gungurawa na graphene da kuma raunin hulɗar da ke tsakanin yadudduka da aka canjawa wuri suna ba da gudummawa ga mafi girman kwanciyar hankali a ƙarƙashin damuwa. Mun kara amfani da wannan tsarin na graphene don ƙirƙirar transistor mai iya miƙewa duka-carbon. Ya zuwa yanzu, wannan shi ne mafi shimfidawa na tushen graphene tare da mafi kyawun bayyananne ba tare da amfani da buckling ba. Kodayake an gudanar da binciken na yanzu don ba da damar graphene don na'urorin lantarki mai shimfiɗawa, mun yi imanin cewa za a iya ƙaddamar da wannan hanyar zuwa wasu kayan 2D don ba da damar na'urorin lantarki na 2D mai shimfiɗawa.
An girma babban yanki CVD graphene akan dakatarwar Cu foils (99.999%; Alfa Aesar) a ƙarƙashin matsa lamba na 0.5 mtorr tare da 50-SCCM (misali cubic centimita a minti daya) CH4 da 20-SCCM H2 a matsayin precursors a 1000 ° C. Dukkan bangarorin biyu na bangon Cu an rufe su da graphene monolayer. Wani bakin bakin ciki na PMMA (2000 rpm; A4, Microchem) an lullube shi a gefe guda na foil Cu, yana samar da tsarin PMMA/G/Cu foil/G. Daga baya, an jika dukkan fim ɗin a cikin 0.1 M ammonium persulfate [(NH4) 2S2O8] bayani na kimanin sa'o'i 2 don cire murfin Cu. A lokacin wannan tsari, graphene na baya mara kariya ya fara yage tare da iyakokin hatsi sannan ya yi birgima cikin gungurawa saboda tashin hankali. An haɗe naɗaɗɗen a kan fim ɗin graphene na sama mai goyon bayan PMMA, suna yin naɗaɗɗen PMMA/G/G. Daga baya an wanke fina-finan a cikin ruwan da aka cire sau da yawa kuma an aza su a kan wani abin da aka yi niyya, kamar SiO2/Si mai tsauri ko roba. Da zaran fim ɗin da aka haɗe ya bushe a kan substrate, samfurin w kamar yadda aka jiƙa a cikin acetone, 1: 1 acetone / IPA ( barasa isopropyl), da IPA don 30 s kowanne don cire PMMA. Ana dumama fina-finan a 100°C na minti 15 ko kuma a ajiye su a cikin wani wuri na dare don cire gaba daya ruwan da aka kama kafin a canza wani Layer na G/G gungurawa. Wannan matakin shine don gujewa warewar fim ɗin graphene daga ma'auni da tabbatar da cikakken ɗaukar hoto na MGG yayin sakin layin mai ɗaukar hoto na PMMA.
An lura da ilimin halittar jiki na tsarin MGG ta amfani da na'urar duban dan tayi (Leica) da na'urar duba microscope (1 kV; FEI). An yi amfani da microscope na ƙarfin atomic (Nanoscope III, Digital Instrument) a yanayin taɓawa don lura da cikakkun bayanai na gungurawa na G. An gwada nuna gaskiyar fim ta hanyar spectrometer mai gani na ultraviolet (Agilent Cary 6000i). Don gwaje-gwajen lokacin da nau'in ya kasance tare da madaidaiciyar jagorar gudana na yanzu, an yi amfani da photolithography da plasma O2 don tsara tsarin graphene cikin tube (~ 300 μm fadi da ~ 2000 μm tsayi), kuma Au (50 nm) ana ajiye su ta hanyar amfani da na'urorin lantarki. inuwa masks a duka iyakar dogon gefe. Sa'an nan kuma an sanya sassan graphene a cikin hulɗa tare da elastomer SEBS (~ 2 cm fadi da ~ 5 cm tsawo), tare da tsayin tsayin raƙuman da ke daidai da gajeren gefen SEBS wanda ya biyo bayan BOE (buffered oxide etch) (HF: H2O). 1:6) etching da eutectic gallium indium (EGaIn) azaman lambobin lantarki. Don gwaje-gwajen nau'i-nau'i na layi daya, tsarin graphene maras kyau (~ 5 × 10 mm) an canza shi zuwa kan abubuwan SEBS, tare da dogayen gatura daidai da gefen dogon gefen SEBS. Ga duka lokuta biyu, G (ba tare da G gungurawa ba)/SEBS an shimfiɗa shi tare da dogon gefen elastomer a cikin na'urar hannu, kuma a wurin, mun auna juriyar juriya a ƙarƙashin damuwa akan tashar bincike tare da na'urar nazari na semiconductor (Keithley 4200). -SCS).
Hanyoyi masu biyowa ne aka ƙirƙira su ta hanyoyi masu zuwa don guje wa lalacewar sauran ƙarfi na polymer dielectric da substrate. An canza tsarin MGG zuwa SEBS azaman na'urorin lantarki. Don samun daidaitaccen abu-fina-finai mai narkewa na bakin ciki (2 μm lokacin farin ciki), Sobs Toluene (ots) na mai rufi (ots) -mrate da 1 / substrate da 1000 rpm na 1 min. Za'a iya canza fim ɗin na bakin ciki na dielectric cikin sauƙi daga saman hydrophobic OTS zuwa saman SEBS wanda aka rufe da graphene da aka shirya. Za a iya yin capacitor ta hanyar ajiye na'urar ruwa-karfe (EGaIn; Sigma-Aldrich) saman na'urar lantarki don tantance ƙarfin aiki azaman aikin iri ta amfani da LCR (inductance, capacitance, juriya) mita (Agilent). Sauran ɓangaren transistor ya ƙunshi nau'ikan CNTs masu sarrafa sinadarai na polymer, suna bin hanyoyin da aka ruwaito a baya (53). An ƙirƙira ƙirar ƙirar tushen/magudanar ruwa a kan madaidaitan sifofin SiO2/Si. Daga baya, sassan biyu, dielectric / G / SEBS da CNTs / G / SiO2 / Si, an haɗa su da juna, kuma an jika su a cikin BOE don cire ƙananan SiO2 / Si. Don haka, an ƙirƙira transistor masu cikakken haske da iya shimfiɗawa. An yi gwajin wutar lantarki a ƙarƙashin damuwa akan saitin miƙewa da hannu azaman hanyar da aka ambata a baya.
Ana samun ƙarin kayan wannan labarin a http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
fig. S1. Hotunan microscopy na gani na monolayer MGG akan sinadarai na SiO2/Si a girma daban-daban.
fig. S4. Kwatanta juriya na takarda mai bincike biyu da watsawa @550 nm na mono-, bi- da trilayer plain graphene (baƙar fata), MGG (ja da'ira), da CNTs (alwati mai shuɗi).
fig. S7. Canjin juriya na al'ada na mono- da bilayer MGGs (baƙar fata) da G (ja) ƙarƙashin ~ 1000 nau'in nau'in cyclic loading har zuwa 40 da 90% daidai da iri, bi da bi.
fig. S10. Hoton SEM na trilayer MGG a kan SEBS elastomer bayan damuwa, yana nuna dogon gungura kan tsage-tsage da yawa.
fig. S12. Hoton AFM na trilayer MGG akan elastomer SEBS na bakin ciki a nau'in 20%, yana nuna cewa gungura ya haye kan tsagewa.
tebur S1. Motsin motsi na bilayer MGG-bangaren carbon nanotube transistor a tsawon tashoshi daban-daban kafin da bayan iri.
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Daga Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Daga Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
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Lokacin aikawa: Janairu-28-2021